Aluminum nitride

[ Density]:
3.26 g/mL at 25 °C(lit.)

[ Boiling Point ]:
2517ºC

[ Melting Point ]:
>2200 °C(lit.)

[ Molecular Formula ]:
AlN

[ Molecular Weight ]:
40.988

[ Exact Mass ]:
40.984612

[ PSA ]:
23.79000

[ LogP ]:
0.24008

[ Stability ]:
Stable.

[ Water Solubility ]:
MAY DECOMPOSE

Click to get detail MSDS

[ Symbol ]:

GHS05, GHS07

[ Signal Word ]:
Danger

[ Hazard Statements ]:
H314-H335

[ Precautionary Statements ]:
P261-P280-P305 + P351 + P338-P310

[ Personal Protective Equipment ]:
dust mask type N95 (US);Eyeshields;Gloves

[ Hazard Codes ]:
Xi:Irritant;

[ Risk Phrases ]:
R36/37/38

[ Safety Phrases ]:
S26-S37/39

[ RIDADR ]:
UN3178

[ WGK Germany ]:
3

[ Packaging Group ]:
II

[ Hazard Class ]:
4.1

Click to get detail synthetic route

Precursor

DownStream

Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.

Opt. Express 21(3) , 3800-8, (2013)

We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carrie...

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.

IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57(1) , 82-7, (2010)

This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows...

Hybrid density functional theory studies of AlN and GaN under uniaxial strain.

J. Phys. Condens. Matter 25(4) , 045801, (2013)

The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated usi...

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