Journal of Crystal Growth_文献综述【化源网】 -


Transition mechanism of the reaction interface of the thermal decomposition of calcite 10.1016/j.jcrysgro.2018.04.005 2018-04-10 Even the reaction layer (excited state CaCO3) is so thin that it is difficult to detect, it is significantly restrict the orientation of the solid product (excited state CaO) of the thermal decomposition of calcite. Quantum chemical calculation with GGA-PW91 ...
A first-principle model of 300 mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate 10.1016/j.jcrysgro.2018.03.013 2018-04-09 The Czochralski (CZ) process is the dominant method for manufacturing large cylindrical single-crystal ingots for the electronics industry. Although many models and control methods for the CZ process have been proposed, they were only tested with small equipm...
Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers 10.1016/j.jcrysgro.2018.04.003 2018-04-07 Lithium molybdate Li2MoO4 (LMO) crystals of mass ranging between 350-500 g are excellent candidates to build heat-scintillation cryogenic bolometers likely to be used for the detection of rare events in astroparticle physics. In this work, numerical modeling ...
Growth and luminescent properties of Ce and Eu doped Cesium Hafnium Iodide single crystalline scintillators 10.1016/j.jcrysgro.2018.03.033 2018-04-04 In order to obtain new scintillators with high light output and high effective atomic number (Zeff), we performed anion-substitution for Cs2HfCl6 (CHC) scintillator, and then, we succeeded in growing Cs2HfI6 (CHI) single crystalline scintillator. It had Zeff ...
Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering 10.1016/j.jcrysgro.2018.04.001 2018-04-03 Electrical and structural properties of TiO2 thin films deposited at room temperature by reactive DC sputtering have been investigated on three different substrates: high resistivity (>1000 Ωcm) float zone Si(111), float zone Si(100) and alkali free glass. As...
Numerical simulation of flow and mass transfer for large KDP crystal growth via solution-jet method 10.1016/j.jcrysgro.2018.03.047 2018-03-30 A novel technique of growing large crystals of potassium dihydrogen phosphate (KDP) named solution-jet method is proposed. The aim is to increase supersaturation on the pyramidal face, especially for crystal surface regions close to the rotation axis. The flu...
Identification of higher order silanes during monosilane pyrolysis using gas chromatography-mass spectrometry 10.1016/j.jcrysgro.2018.03.024 2018-03-30 There is a deficit of ways to detect higher order silane isomers during silane pyrolysis. Thus, a novel instrument utilizing gas chromatography-mass spectrometry (GC-MS) for detection of higher order silanes has been developed. The instrument enables us to se...
An analysis of the specificity of defects embedded into (1 0 0) and (1 1 1) faceted CVD diamond microcrystals grown on Si and Mo substrates by using E/H field discharge 10.1016/j.jcrysgro.2018.03.045 2018-03-29 The PE CVD method with magnetic field discharge stabilization was applied for the growth of arrays of freestanding diamond grains (island films) as well as continuous films on Mo and Si substrates with (1 1 1) and (1 0 0) faceted microcrystals, respectively. ...
Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD 10.1016/j.jcrysgro.2018.03.046 2018-03-29 Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of d...
Investigation of Cd1-xMgxTe as possible materials for X and gamma ray detectors 10.1016/j.jcrysgro.2018.03.035 2018-03-28 In recent years, a series of investigations has been devoted to a possibility of using crystals based on CdTe with addition of magnesium (Mg) for X and gamma radiation detectors. Since we have had wide technological possibilities of preparing crystals and inv...

Transition mechanism of the reaction interface of the thermal decomposition of calcite

10.1016/j.jcrysgro.2018.04.005

2018-04-10

Even the reaction layer (excited state CaCO3) is so thin that it is difficult to detect, it is significantly restrict the orientation of the solid product (excited state CaO) of the thermal decomposition of calcite. Quantum chemical calculation with GGA-PW91 ...

A first-principle model of 300 mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate

10.1016/j.jcrysgro.2018.03.013

2018-04-09

The Czochralski (CZ) process is the dominant method for manufacturing large cylindrical single-crystal ingots for the electronics industry. Although many models and control methods for the CZ process have been proposed, they were only tested with small equipm...

Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers

10.1016/j.jcrysgro.2018.04.003

2018-04-07

Lithium molybdate Li2MoO4 (LMO) crystals of mass ranging between 350-500 g are excellent candidates to build heat-scintillation cryogenic bolometers likely to be used for the detection of rare events in astroparticle physics. In this work, numerical modeling ...

Growth and luminescent properties of Ce and Eu doped Cesium Hafnium Iodide single crystalline scintillators

10.1016/j.jcrysgro.2018.03.033

2018-04-04

In order to obtain new scintillators with high light output and high effective atomic number (Zeff), we performed anion-substitution for Cs2HfCl6 (CHC) scintillator, and then, we succeeded in growing Cs2HfI6 (CHI) single crystalline scintillator. It had Zeff ...

Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering

10.1016/j.jcrysgro.2018.04.001

2018-04-03

Electrical and structural properties of TiO2 thin films deposited at room temperature by reactive DC sputtering have been investigated on three different substrates: high resistivity (>1000 Ωcm) float zone Si(111), float zone Si(100) and alkali free glass. As...

Numerical simulation of flow and mass transfer for large KDP crystal growth via solution-jet method

10.1016/j.jcrysgro.2018.03.047

2018-03-30

A novel technique of growing large crystals of potassium dihydrogen phosphate (KDP) named solution-jet method is proposed. The aim is to increase supersaturation on the pyramidal face, especially for crystal surface regions close to the rotation axis. The flu...

Identification of higher order silanes during monosilane pyrolysis using gas chromatography-mass spectrometry

10.1016/j.jcrysgro.2018.03.024

2018-03-30

There is a deficit of ways to detect higher order silane isomers during silane pyrolysis. Thus, a novel instrument utilizing gas chromatography-mass spectrometry (GC-MS) for detection of higher order silanes has been developed. The instrument enables us to se...

An analysis of the specificity of defects embedded into (1 0 0) and (1 1 1) faceted CVD diamond microcrystals grown on Si and Mo substrates by using E/H field discharge

10.1016/j.jcrysgro.2018.03.045

2018-03-29

The PE CVD method with magnetic field discharge stabilization was applied for the growth of arrays of freestanding diamond grains (island films) as well as continuous films on Mo and Si substrates with (1 1 1) and (1 0 0) faceted microcrystals, respectively. ...

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

10.1016/j.jcrysgro.2018.03.046

2018-03-29

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of d...

Investigation of Cd1-xMgxTe as possible materials for X and gamma ray detectors

10.1016/j.jcrysgro.2018.03.035

2018-03-28

In recent years, a series of investigations has been devoted to a possibility of using crystals based on CdTe with addition of magnesium (Mg) for X and gamma radiation detectors. Since we have had wide technological possibilities of preparing crystals and inv...