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Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
10.1002/aelm.201700489 2018-03-24 The structural origin of the temperature‐dependent ferroelectricity in Si‐doped HfO2 thin films is systematically examined. From temperature‐dependent polarization‐electric field measurements, it is shown that remanent polarization increases with decreasing t... |
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Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization
10.1002/aelm.201700524 2018-03-14 The effect of hydrogen flow on MoS2 film synthesis via chemical vapor deposition is studied systematically. Large‐sized monolayer‐ and bilayer‐MoS2 triangles can be synthesized controllably at given temperatures. Optical microscopy, Raman spectroscopy, photol... |
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A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing
10.1002/aelm.201700608 2018-03-13 There is a growing trend of developing steep slope transistors with subthreshold swing (SS) below 60 mV dec−1. At present, there are mainly three kinds of steep slope transistors: tunneling transistor, negative capacitance transistor, and nano‐electromechanic... |
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Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2
10.1002/aelm.201700563 2018-03-13 Substitutional atomic doping is one of the most convenient and precise routes to modulate semiconducting material properties. Although two‐dimensional (2D) layered transition metal dichalcogenides (TMDs) are of great interest as a prominent semiconducting mat... |
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A High‐Speed and Low‐Power Multistate Memory Based on Multiferroic Tunnel Junctions
10.1002/aelm.201700560 2018-03-13 Ferroic‐order‐based devices are emerging as alternatives to high density, high switching speed, and low‐power memories. Here, multi‐nonvolatile resistive states with a switching speed of 6 ns and a write current density of about 3 × 103 A cm−2 are demonstrate... |
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Magnetic Diode Behavior at Room Temperature in 2D Honeycombs
10.1002/aelm.201700500 2018-03-13 The magnetic analog of a semiconductor diode, demonstrating unidirectional electrical transport, is a highly desirable functionality for spintronics application, as it can play a dual role as magnetic memory device and logic element. However, creating such a ... |
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Transient Resistive Switching Memory of CsPbBr3 Thin Films
10.1002/aelm.201700596 2018-03-12 Recently, transient electronic devices play an indispensable role in modern disposable electronics and create potential application fields that cannot be addressed with conventional electronic devices or systems. However, the choice of transient materials has... |
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Improving Miscibility of a Naphthalene Diimide‐Bithiophene Copolymer with n‐Type Dopants through the Incorporation of “Kinked” Monomers
10.1002/aelm.201700581 2018-03-12 N‐type doping of polymer semiconductors is necessary to enable printable and efficient organic thermoelectric generators. A recently reported method relies on blending air‐stable benzimidazole derivative dopant molecules with good electron transporting materi... |
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Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes
10.1002/aelm.201700550 2018-03-12 A new device structure of oxide thin‐film transistor (TFT) having lower overlap capacitance without scarifying the drain current is proposed. This can be used for high‐speed circuits and high frame rate displays using the conventional TFT manufacturing proces... |
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Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches (Adv. Electron. Mater. 3/2018)
10.1002/aelm.201870014 2018-03-09 In article 1700461, Weisheng Zhao and co-workers demonstrate a heterogeneous memristive device based on a magnetic tunnel junction nanopillar surrounded by resistive filaments. It features spin transfer torque fast switching for computation together with mult... |