Electrochemical vapor deposition of semiconductors from gas phase with a solid membrane cell.

Sung Ki Cho, Fu-Ren F Fan, Allen J Bard

Index: J. Am. Chem. Soc. 137 , 6638-42, (2015)

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Abstract

We demonstrate the feasibility of semiconductor deposition via the electrochemical reduction of gaseous precursors by the use of an anhydrous proton-conducting membrane, the solid acid CsHSO4, at 165 °C. This membrane electrode assembly was operated within the oxidation of hydrogen on a porous Pt anode and the deposition of Si or Ge under bias at the cathode from chloride-based gaseous precursors; SiCl4 and GeCl4 in an Ar flow with a reduction potential over -1.0 V (vs RHE).