gallium arsenide structure
|
Common Name | gallium arsenide | ||
---|---|---|---|---|
CAS Number | 1303-00-0 | Molecular Weight | 144.64 | |
Density | 5.31 g/mL at 25 °C(lit.) | Boiling Point | N/A | |
Molecular Formula | GaAs | Melting Point | 1238°C | |
MSDS | Chinese USA | Flash Point | N/A | |
Symbol |
GHS08 |
Signal Word | Danger |
Name | gallanylidynearsane |
---|---|
Synonym | More Synonyms |
Density | 5.31 g/mL at 25 °C(lit.) |
---|---|
Melting Point | 1238°C |
Molecular Formula | GaAs |
Molecular Weight | 144.64 |
Index of Refraction | 3.57 |
CHEMICAL IDENTIFICATION
HEALTH HAZARD DATAACUTE TOXICITY DATA
|
Symbol |
GHS08 |
---|---|
Signal Word | Danger |
Hazard Statements | H350-H372 |
Precautionary Statements | P201-P308 + P313 |
Target Organs | respiratory and haematopoietic systems |
Hazard Codes | T,N |
Risk Phrases | R23/25 |
Safety Phrases | S20/21-S28-S45-S60-S61 |
RIDADR | UN 1557 6.1/PG 2 |
WGK Germany | 3 |
RTECS | LW8800000 |
Packaging Group | II |
Hazard Class | 6.1 |
HS Code | 2853009022 |
HS Code | 2853009022 |
---|
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Opt. Express 20(17) , 19279-88, (2012) We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thic... |
|
Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode.
PLoS ONE 7(11) , e50681, (2012) Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evapora... |
|
Light-hole quantization in the optical response of ultra-wide GaAs/Al(x)Ga(1-x)As quantum wells.
J. Phys. Condens. Matter 25(2) , 025801, (2013) Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a siz... |
MFCD00011017 |
arsanylidynegallium |
Gallium monoarsenide |
GALLIUM ARSENIDE |
EINECS 215-114-8 |