Tetrakis(ethylmethylamino)hafnium

Modify Date: 2024-01-04 21:51:57

Tetrakis(ethylmethylamino)hafnium Structure
Tetrakis(ethylmethylamino)hafnium structure
Common Name Tetrakis(ethylmethylamino)hafnium
CAS Number 352535-01-4 Molecular Weight 410.89900
Density 1.324 Boiling Point 79ºC0.1 mm Hg(lit.)
Molecular Formula C12H32HfN4 Melting Point <-50ºC
MSDS Chinese USA Flash Point 52 °F
Symbol GHS02 GHS07
GHS02, GHS07
Signal Word Danger

 Names

Name ethyl(methyl)azanide,hafnium(4+)
Synonym More Synonyms

 Chemical & Physical Properties

Density 1.324
Boiling Point 79ºC0.1 mm Hg(lit.)
Melting Point <-50ºC
Molecular Formula C12H32HfN4
Molecular Weight 410.89900
Flash Point 52 °F
Exact Mass 412.20900
PSA 12.96000
LogP 1.60960
Storage condition 2-8°C

 Safety Information

Symbol GHS02 GHS07
GHS02, GHS07
Signal Word Danger
Hazard Statements H225-H261-H315-H319-H335
Supplemental HS Reacts violently with water.
Precautionary Statements P210-P231 + P232-P261-P305 + P351 + P338-P422
Personal Protective Equipment Eyeshields;Faceshields;full-face respirator (US);Gloves;multi-purpose combination respirator cartridge (US);type ABEK (EN14387) respirator filter
Hazard Codes F: Flammable;Xi: Irritant;
Risk Phrases R11
Safety Phrases 16-26-36
RIDADR UN 3398 4.3/PG 2
WGK Germany 3
Packaging Group II
Hazard Class 4.3
HS Code 2921199090

 Customs

HS Code 2921199090
Summary 2921199090 other acyclic monoamines and their derivatives; salts thereof VAT:17.0% Tax rebate rate:9.0% Supervision conditions:none MFN tariff:6.5% General tariff:30.0%

 Articles1

More Articles
In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).

ACS Appl. Mater. Interfaces 2 , 347, (2010)

The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and...

 Synonyms

TEMAH
MFCD03427130
TEMAH (Tetrakis(ethylmethylamino)hafnium(IV)